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CYStech Electronics Corp. High -speed switching diode Spec. No. : C303S2 Issued Date : 2003.12.11 Revised Date Page No. : 1/4 MDL914S2 Description The MDL914S2 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOD-323 plastic SMD package. Symbol Outline SOD-323 MDL914S2 Features * Small plastic SMD package * High switching speed: max. 4ns * Reverse voltage: max. 100V * Peak forward surge current: max. 500mA. Applications * High-speed switching in thick and thin-film circuits. Absolute Maximum Ratings @TA=25 Parameters Reverse voltage Forward current Peak forward surge current Junction Temperature Storage Temperature Symbol VR IF IFSM Tj Tstg Min -65 Max 100 200 500 150 +150 Unit V mA mA C C MDL914S2 CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics @ TA=25 unless otherwise specified Parameters Reverse breakdown voltage Forward voltage Reverse leakage current Diode capacitance Reverse recovery time Symbol VR VF IR CD trr Conditions IR=100A IF=10mA VR=20V VR=75V VR=0V, f=1MHz when switched from IF=10mA to IR=10mA,RL=100, measured at IR=1mA Min - Spec. No. : C303S2 Issued Date : 2003.12.11 Revised Date Page No. : 2/4 Typ. - Max 1 25 5 4 4 Unit V nA A pF ns Thermal Characteristics Symbol Ptot, Ta=25 Derate above 25 Rth, j-a Parameter Total device dissipation on FR-4 board Thermal resistance from junction to ambient Conditions Note 1 Note 1 Max 200 1.57 635 Unit mW mW/ /W Note 1: Device mounted on an FR-4 PCB. MDL914S2 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Forward Current vs Forward Voltage 100 Reverse Leakage Current---IR(A) 100 Spec. No. : C303S2 Issued Date : 2003.12.11 Revised Date Page No. : 3/4 Reverse Leakage Current vs Reverse Voltage Forward Current---I F(mA) 10 T a= 150 1 T a= 125 Ta=85 Ta=55 10 T a=8 5 T a= 2 5 1 T a=- 40 0.1 0.01 0.1 0.2 0.4 0.6 0.8 1 1.2 0.001 0 10 20 T a= 25 30 40 50 Forward Voltage---VF(V) Reverse Voltage---VR(V) Capacitance vs Reverse Voltage 0.68 Diode Capacitance ---C D(pF) f=1MHz Ta=25 0.64 0.6 0.56 0.52 0 0.2 0.4 0.6 0.8 Reverse Voltage---VR(V) MDL914S2 CYStek Product Specification CYStech Electronics Corp. SOD-323 Dimension Spec. No. : C303S2 Issued Date : 2003.12.11 Revised Date Page No. : 4/4 Marking: K A 1 2 5H 5D B D Style: Pin 1.Cathode 2.Anode 2-Lead SOD-323 Plastic Surface Mounted Package, CYStek Package Code: S2 H J E C *: Typical DIM A B C D Inches Min. Max. 0.0630 0.0709 0.0453 0.0531 0.0315 0.0394 0.0098 0.0157 Millimeters Min. Max. 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40 DIM E H J K Inches Min. Max. 0.0060 REF 0.0000 0.0040 0.0035 0.0070 0.0906 0.1063 Millimeters Min. Max. 0.15 REF 0.00 0.10 0.089 0.177 2.30 2.70 Notes: 1.Controlling dimension : millimeters. 2.Lead thickness specified per L/F drawing with solder plating. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MDL914S2 CYStek Product Specification |
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